b 5817w 2.70 3.70 0.55 1.05 1.6 B5817W schottky barrier diode features o power dissipation p d : 450 m w ? t amb=25 ??? collector current i f : 1 a c ollector - base voltage v r : 20 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? mark ing o sj electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1ma 20 v reverse voltage leakage current i r v r = 20v 1 ma forward voltage v f i f = 1a i f = 3a 0.45 0.75 v diode capacitance c d v r = 4v f=1mhz 120 pf unit o mm so d - 1 23 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
b 5817w http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
b 5817w c b d 0.20 e a1 a2 a e1 l l1 symbol a a1 a2 b c d e e1 l l1 | min 1.050 0.000 1.050 0.450 0.080 1.500 2.600 3.550 0.250 0 max 1.250 0.100 1.150 0.650 0.150 1.700 2.800 3.850 0.450 8 min 0.041 0.000 0.041 0.018 0.003 0.059 0.102 0.140 0.010 0 max 0.049 0.004 0.045 0.026 0.006 0.067 0.110 0.152 0.018 8 dimensions in millimeters dimensions in inches 0.020ref 0.500ref | http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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